From Lab to IEEE: Micsig Probes Powering University Research Testing
With the rapid advancement of new energy vehicles, energy storage systems, and high-power power electronics, third-generation semiconductor devices such as SiC MOSFETs are seeing widespread adoption. Higher switching speeds and power density have unlocked new opportunities for the industry, while simultaneously imposing more stringent demands on test and measurement instruments.
Recently, multiple research teams whose findings have been published in leading IEEE journals have independently selected Micsig high-voltage isolated probes and optical-fiber isolated probes to perform critical waveform measurements, providing essential test support for experimental data analysis and research conclusion validation.
- Active Gate Driver Technology Research
In the study “An Oscillation-Free Active Gate Driver with Self-Adaptive Overshoot Control for SiC MOSFETs,” the research team proposed an active gate driver solution with adaptive overshoot control capability, achieving overshoot suppression and oscillation elimination by regulating gate current. The paper conducted extensive experimental validation under operating conditions of 600V/50 A, 100A, and 200A.
During the experiments, the research team carried out double-pulse tests (DPT) and multi-pulse tests (MPT), analyzing Vds and Vgs waveforms under different driving strategies. The test platform employed Micsig DP1502 high-voltage isolated probes and MOIP200P optical-fiber isolated probes for critical voltage waveform measurements, providing solid experimental evidence for drive strategy evaluation.



Paper content cited from “An Oscillation-Free Active Gate Driver with Self-Adaptive Overshoot Control for SiC MOSFETs”
- SiC MOSFET Turn-off Measurement Research
In the study “SiC MOSFET Turn-off Measurement with Air-Core Inductor Design and RC Snubber Correction,” researchers focused on the impact of parasitic parameters on SiC MOSFET turn-off measurement results.
The underlying mechanisms by which these two types of parasitic parameters affect turn-off test results were thoroughly analyzed. Building on this mechanistic understanding, the team proposed a load inductor optimization design methodology and a precise turn-off current measurement approach, enabling high-accuracy turn-off characterization.


Paper content cited from “SiC MOSFET Turn-off Measurement with Air-Core Inductor Design and RC Snubber Correction”
- SiC Device Dynamic Characterization — Experimental Validation
In another SiC device dynamic testing study, the research team similarly conducted experimental validation of transient characteristics during device switching. Key parameters—including gate-source voltage (Vgs) and drain-source voltage (Vds)—were measured to evaluate device behavior and driving performance.
Given that these tests involve high-voltage isolated measurements and high-speed dynamic signal observation, they impose demanding requirements on probe bandwidth, isolation capability, and immunity to electromagnetic interference. Micsig probes, serving as an essential component of the test chain, played a vital role in completing the critical voltage signal measurements.

Paper content cited from “Effect of Voltage Probes on Characterisation of Switching Processes in Wide-bandgap Semiconductor Devices”
For high-speed power device research, test data has always been the bedrock of scientific inquiry, underpinning the consistency between theoretical analysis and experimental conclusions.
Targeting the common high-voltage, high-common-mode, and high-speed switching measurement scenarios prevalent in the power electronics domain, Micsig continues to expand and refine its product portfolio—including high-voltage isolated probes and optical-fiber isolated probes—providing robust support to university laboratories, research institutions, and R&D teams worldwide.
Looking ahead, Micsig will continue to deepen its expertise in the power electronics test and measurement domain, empowering scientific innovation with reliable measurement products and helping more research breakthroughs transition seamlessly from experimental validation to real-world industrial application.
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